BUZ31L

Power Field-Effect Transistor, 13.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power95W

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Infineon BUZ31L technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	13.5A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	200mR
Drain to Source Voltage (Vdss)	200V
Fall Time	65ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.6nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	95W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	95W
Rds On Max	200mR
RoHS Compliant	Yes
Series	SIPMOS®
Turn-Off Delay Time	210ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.