Infineon
BUZ325
Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
PackageTO-218
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Technical Specifications
Infineon BUZ325 technical specifications.
General
| Package/Case | TO-218 |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Voltage (Vdss) | 400V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
No datasheet is available for this part.