Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Infineon BUZ80A technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 800V |
| Input Capacitance | 1.35nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Rds On Max | 3R |
| RoHS Compliant | No |
| Series | SIPMOS® |
| RoHS | Not Compliant |
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