The DDB2U50N08W1R_B23 is a 60A N-Channel MOSFET with a maximum operating temperature of 125°C and a minimum operating temperature of -40°C. It features a gate to source voltage of 20V and a fall time of 30ns. The device is mounted using a screw mount and is packaged in a FLANGE MOUNT, R-XUFM-X9 package. The DDB2U50N08W1R_B23 is RoHS compliant.
Infineon DDB2U50N08W1R_B23 technical specifications.
| Continuous Drain Current (ID) | 60A |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 24 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 325ns |
| Turn-On Delay Time | 100ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon DDB2U50N08W1R_B23 to view detailed technical specifications.
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