The DDB6U30N08VR is a 600V insulated gate bipolar transistor (IGBT) module from Infineon. It features a maximum collector current of 26A and is designed for screw mount applications. The module has a package quantity of 40 and is packaged in a tray. It is not RoHS compliant. The IGBT module has a maximum operating temperature of 125°C and a minimum operating temperature of -40°C.
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Infineon DDB6U30N08VR technical specifications.
| Package/Case | Module |
| Collector-emitter Voltage-Max | 600V |
| Height | 12mm |
| Length | 35.6mm |
| Max Collector Current | 26A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 40 |
| Packaging | Tray |
| RoHS Compliant | No |
| Width | 25.4mm |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon DDB6U30N08VR to view detailed technical specifications.
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