The DF1000R17IE4 is a high-power insulated gate bipolar transistor from Infineon, featuring a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 1.39kA. It has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The transistor is packaged in a flange mount with a screw mount and has a maximum power dissipation of 6.25kW. The device is RoHS compliant but not Reach SVHC compliant.
PackageModule
MountingScrew
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Technical Specifications
Infineon DF1000R17IE4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 1.39kA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 6.25kW |
| Mount | Screw |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.