Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-12
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Infineon DF1000R17IE4D_B2 technical specifications.
| Number of Terminals | 12 |
| Terminal Position | UPPER |
| Pin Count | 12 |
| Number of Elements | 1 |
| RoHS | Yes |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
