The DF650R17IE4 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 930A. It is designed for high-power applications and has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The module is mounted using screws and has a power dissipation of up to 4.15kW. The device is compliant with RoHS regulations but not with Reach SVHC.
PackageModule
MountingScrew
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Technical Specifications
Infineon DF650R17IE4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 930A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 4.15kW |
| Mount | Screw |
| Package Quantity | 3 |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon DF650R17IE4 Datasheet
Download the complete datasheet for Infineon DF650R17IE4 to view detailed technical specifications.
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