The Infineon ESD5V0S5USH6327XTSA1 is a unidirectional transient voltage suppressor diode with a maximum operating temperature of 125 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum reverse voltage of 5.3V and a nominal breakdown voltage of 6.7V. The diode is made of silicon and has a maximum non-repetitive peak reverse power dissipation of 130mW. It is available in a 6-pin R-PDSO-G6 package.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon ESD5V0S5USH6327XTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 125 |
| Number of Terminals | 6 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 5 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5.3 |
| Breakdown Voltage-Min | 5.7 |
| Non-rep Peak Rev Power Dis-Max | 130 |
| Clamping Voltage-Max | 9.3 |
| Breakdown Voltage-Nom | 6.7 |
| Breakdown Voltage-Max | 7.7 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon ESD5V0S5USH6327XTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
