This silicon transient voltage suppressor diode features a breakdown voltage range of 6V to 10V and a maximum operating temperature of 125 degrees Celsius. It has a bidirectional polarity and is constructed with a single element. The diode is mounted on the bottom with a 2-terminal configuration. It is suitable for use in applications where voltage suppression is required.
PolarityBIDIRECTIONAL
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Technical Specifications
Infineon ESD5V3L1B02LRHE6327XTSA1 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5.3 |
| Breakdown Voltage-Min | 6 |
| Breakdown Voltage-Max | 10 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon ESD5V3L1B02LRHE6327XTSA1 Datasheet
Download the complete datasheet for Infineon ESD5V3L1B02LRHE6327XTSA1 to view detailed technical specifications.
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