Unidirectional transient voltage suppressor diode offering 66W peak pulse power and 5.5A peak pulse current. Features a 5.3V working voltage, 5.7V minimum breakdown voltage, and 9V clamping voltage. This silicon diode has a low leakage current of 100nA and a capacitance of 40pF. Designed for surface mount applications with a compact 1mm x 0.6mm x 0.4mm footprint. Operating temperature range from -55°C to 125°C.
Capacitance40pF
Voltage Rating5.3V
MountingSurface Mount
PolarityUnidirectional
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Technical Specifications
Infineon ESD5V3S1U02LRHE6327XTSA1 technical specifications.
General
Capacitance
40pF
Clamping Voltage
9V
Depth
0.6mm
Diode Type
ZENER
Direction
Unidirectional
Leakage Current
100nA
Length
1mm
Min Breakdown Voltage
5.7V
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
66W
Max Surge Current
5.5A
Mount
Surface Mount
Number of Channels
1
Number of Unidirectional Channels
1
Operating Supply Voltage
5.3V
Package Quantity
1
Packaging
Tape and Reel
Peak Pulse Current
5.5A
Peak Pulse Power
66W
Polarity
Unidirectional
Power Line Protection
No
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Standoff Voltage
5.3V
RoHS Compliant
Yes
Termination
SMD/SMT
Working Voltage
5.3V
Compliance
RoHS
Compliant
Datasheet
Infineon ESD5V3S1U02LRHE6327XTSA1 Datasheet
Download the complete datasheet for Infineon ESD5V3S1U02LRHE6327XTSA1 to view detailed technical specifications.
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