Unidirectional transient voltage suppressor diode offering 66W peak pulse power and 5.5A peak pulse current. Features a 5.3V working voltage, 5.7V minimum breakdown voltage, and 9V clamping voltage. This silicon diode has a low leakage current of 100nA and a capacitance of 40pF. Designed for surface mount applications with a compact 1mm x 0.6mm x 0.4mm footprint. Operating temperature range from -55°C to 125°C.
Infineon ESD5V3S1U02LRHE6327XTSA1 technical specifications.
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