
Unidirectional transient voltage suppressor diode offering 66W peak pulse power and 5.5A peak pulse current. Features a 5.3V working voltage, 5.7V minimum breakdown voltage, and 9V clamping voltage. This silicon diode has a low leakage current of 100nA and a capacitance of 40pF. Designed for surface mount applications with a compact 1mm x 0.6mm x 0.4mm footprint. Operating temperature range from -55°C to 125°C.
Infineon ESD5V3S1U02LRHE6327XTSA1 technical specifications.
| Capacitance | 40pF |
| Clamping Voltage | 9V |
| Depth | 0.6mm |
| Diode Type | ZENER |
| Direction | Unidirectional |
| Leakage Current | 100nA |
| Length | 1mm |
| Min Breakdown Voltage | 5.7V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Max Surge Current | 5.5A |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Unidirectional Channels | 1 |
| Operating Supply Voltage | 5.3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Peak Pulse Current | 5.5A |
| Peak Pulse Power | 66W |
| Polarity | Unidirectional |
| Power Line Protection | No |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Standoff Voltage | 5.3V |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Working Voltage | 5.3V |
| RoHS | Compliant |
Download the complete datasheet for Infineon ESD5V3S1U02LRHE6327XTSA1 to view detailed technical specifications.
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