Infineon
FD1000R33HE3-K
Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
PackageModule
MountingScrew
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Technical Specifications
Infineon FD1000R33HE3-K technical specifications.
General
Package/Case
Module
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Mount
Screw
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FD1000R33HE3-K Datasheet
Download the complete datasheet for Infineon FD1000R33HE3-K to view detailed technical specifications.
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