Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel, MODULE-7
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| Package/Case | Module |
| Collector Emitter Voltage (VCEO) | 3.3kV |
| Collector-emitter Voltage-Max | 3.3kV |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Package Quantity | 2 |
| RoHS Compliant | No |
| RoHS | Not Compliant |
