The FF100R12RT4HOSA1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a continuous collector current of 100A. It has a maximum power dissipation of 555W and operates within a temperature range of -40°C to 150°C. The device is packaged in a flange mount configuration and is compliant with RoHS regulations.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon FF100R12RT4HOSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon FF100R12RT4HOSA1 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Continuous Collector Current | 100A |
| Halogen Free | Not Halogen Free |
| Height | 30.5mm |
| Input | Standard |
| Input Capacitance | 630nF |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 555W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 300ns |
| Turn-On Delay Time | 130ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon FF100R12RT4HOSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
