The FF100R12RT4HOSA1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a continuous collector current of 100A. It has a maximum power dissipation of 555W and operates within a temperature range of -40°C to 150°C. The device is packaged in a flange mount configuration and is compliant with RoHS regulations.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FF100R12RT4HOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Continuous Collector Current | 100A |
| Halogen Free | Not Halogen Free |
| Height | 30.5mm |
| Input | Standard |
| Input Capacitance | 630nF |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 555W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 300ns |
| Turn-On Delay Time | 130ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF100R12RT4HOSA1 Datasheet
Download the complete datasheet for Infineon FF100R12RT4HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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