Infineon
FF150R12KE3G
Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
PackageModule
MountingScrew
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Technical Specifications
Infineon FF150R12KE3G technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Max Collector Current | 225A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon FF150R12KE3G Datasheet
Download the complete datasheet for Infineon FF150R12KE3G to view detailed technical specifications.
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