Infineon
FF150R12YT3
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
PackageModule
MountingPCB, Screw
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Technical Specifications
Infineon FF150R12YT3 technical specifications.
General
Package/Case
Module
Collector-emitter Voltage-Max
1.2kV
Height
17mm
Length
55.9mm
Max Collector Current
200A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
625W
Mount
PCB, Screw
Package Quantity
20
RoHS Compliant
Yes
Width
45.6mm
Compliance
RoHS
Compliant
Datasheet
Infineon FF150R12YT3 Datasheet
Download the complete datasheet for Infineon FF150R12YT3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.