
N-channel IGBT power module featuring 1.2kV Collector-Emitter Breakdown Voltage and 200A Continuous Collector Current, with a maximum of 320A. This module offers 1.75V Collector-Emitter Saturation Voltage and 1.1kW Power Dissipation, operating between -40°C and 150°C. It includes 14nF Input Capacitance and is designed for chassis or panel mounting with screw terminals. The module is RoHS compliant and packaged in bulk.
Infineon FF200R12KT4HOSA1 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Continuous Collector Current | 200A |
| Halogen Free | Not Halogen Free |
| Height | 30.9mm |
| Input | Standard |
| Input Capacitance | 14nF |
| Lead Free | Lead Free |
| Length | 106.4mm |
| Max Collector Current | 320A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.1kW |
| Mount | Chassis Mount, Panel, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.1kW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | C |
| Turn-Off Delay Time | 450ns |
| Turn-On Delay Time | 160ns |
| Width | 61.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon FF200R12KT4HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
