N-channel IGBT power module featuring 1.2kV Collector-Emitter Breakdown Voltage and 200A Continuous Collector Current, with a maximum of 320A. This module offers 1.75V Collector-Emitter Saturation Voltage and 1.1kW Power Dissipation, operating between -40°C and 150°C. It includes 14nF Input Capacitance and is designed for chassis or panel mounting with screw terminals. The module is RoHS compliant and packaged in bulk.
PackageModule
MountingChassis Mount, Panel, Screw
PolarityNPN
Power1.1kW
Quick Jump:
Technical Specifications
Infineon FF200R12KT4HOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
1.75V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.15V
Continuous Collector Current
200A
Halogen Free
Not Halogen Free
Height
30.9mm
Input
Standard
Input Capacitance
14nF
Lead Free
Lead Free
Length
106.4mm
Max Collector Current
320A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.1kW
Mount
Chassis Mount, Panel, Screw
NTC Thermistor
No
Package Quantity
10
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.1kW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
C
Turn-Off Delay Time
450ns
Turn-On Delay Time
160ns
Width
61.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon FF200R12KT4HOSA1 Datasheet
Download the complete datasheet for Infineon FF200R12KT4HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
