N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V collector-emitter breakdown voltage and 460A continuous collector current. This IGBT module offers a low collector-emitter saturation voltage of 2.15V and a maximum power dissipation of 1.6kW. Designed for chassis mounting with screw terminals, it includes an integrated NTC thermistor for temperature monitoring. Operating within a temperature range of -40°C to 150°C, this RoHS compliant component has a turn-on delay of 200ns and a turn-off delay of 500ns.
PackageModule
MountingChassis Mount, Screw
PolarityNPN
Power1.6kW
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Technical Specifications
Infineon FF300R12KE4HOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.15V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.15V
Continuous Collector Current
460A
Halogen Free
Not Halogen Free
Height
31.4mm
Input
Standard
Input Capacitance
19nF
Lead Free
Lead Free
Max Collector Current
460A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.6kW
Mount
Chassis Mount, Screw
NTC Thermistor
Yes
Package Quantity
10
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.6kW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
500ns
Turn-On Delay Time
200ns
Compliance
RoHS
Compliant
Datasheet
Infineon FF300R12KE4HOSA1 Datasheet
Download the complete datasheet for Infineon FF300R12KE4HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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