N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V Collector Emitter Breakdown Voltage and a 450A maximum continuous collector current. This device offers a 2.1V Collector Emitter Saturation Voltage and operates within a temperature range of -40°C to 150°C. With a 1.6kW maximum power dissipation, it is designed for chassis mount applications. The IGBT module includes standard input with 19nF input capacitance and exhibits turn-on delay time of 160ns and turn-off delay time of 450ns.
PackageModule
MountingChassis Mount, Screw
PolarityNPN
Power1.6kW
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Technical Specifications
Infineon FF300R12KT4HOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
1.75V
Collector-emitter Voltage-Max
2.15V
Continuous Collector Current
300A
Halogen Free
Not Halogen Free
Input
Standard
Input Capacitance
19nF
Lead Free
Lead Free
Max Collector Current
450A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.6kW
Mount
Chassis Mount, Screw
NTC Thermistor
No
Package Quantity
10
Polarity
NPN
Power Dissipation
1.6kW
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
C
Turn-Off Delay Time
450ns
Turn-On Delay Time
160ns
Compliance
RoHS
Compliant
Datasheet
Infineon FF300R12KT4HOSA1 Datasheet
Download the complete datasheet for Infineon FF300R12KT4HOSA1 to view detailed technical specifications.
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