N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V Collector Emitter Breakdown Voltage and a 450A maximum continuous collector current. This device offers a 2.1V Collector Emitter Saturation Voltage and operates within a temperature range of -40°C to 150°C. With a 1.6kW maximum power dissipation, it is designed for chassis mount applications. The IGBT module includes standard input with 19nF input capacitance and exhibits turn-on delay time of 160ns and turn-off delay time of 450ns.
PackageModule
MountingChassis Mount, Screw
PolarityNPN
Power1.6kW
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Technical Specifications
Infineon FF300R12KT4HOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.75V |
| Collector-emitter Voltage-Max | 2.15V |
| Continuous Collector Current | 300A |
| Halogen Free | Not Halogen Free |
| Input | Standard |
| Input Capacitance | 19nF |
| Lead Free | Lead Free |
| Max Collector Current | 450A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.6kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Polarity | NPN |
| Power Dissipation | 1.6kW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | C |
| Turn-Off Delay Time | 450ns |
| Turn-On Delay Time | 160ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF300R12KT4HOSA1 Datasheet
Download the complete datasheet for Infineon FF300R12KT4HOSA1 to view detailed technical specifications.
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