N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. Features a 1700V collector-emitter breakdown voltage and a continuous collector current of 440A. Offers a maximum power dissipation of 1.8kW and a low collector-emitter saturation voltage of 2.45V. Includes a 24.5nF input capacitance and operates within a temperature range of -40°C to 150°C. Chassis mountable with screw terminals for secure installation.
PackageModule
MountingChassis Mount, Screw
PolarityNPN
Power1.8kW
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Technical Specifications
Infineon FF300R17KE4HOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.7kV
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage (VCEO)
1.95V
Collector-emitter Voltage-Max
2.3V
Continuous Collector Current
440A
Halogen Free
Not Halogen Free
Height
31.4mm
Input
Standard
Input Capacitance
24.5nF
Lead Free
Lead Free
Max Collector Current
440A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.8kW
Mount
Chassis Mount, Screw
NTC Thermistor
No
Package Quantity
10
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.8kW
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
700ns
Turn-On Delay Time
240ns
Compliance
RoHS
Compliant
Datasheet
Infineon FF300R17KE4HOSA1 Datasheet
Download the complete datasheet for Infineon FF300R17KE4HOSA1 to view detailed technical specifications.
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