N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. Features a 1700V collector-emitter breakdown voltage and a continuous collector current of 440A. Offers a maximum power dissipation of 1.8kW and a low collector-emitter saturation voltage of 2.45V. Includes a 24.5nF input capacitance and operates within a temperature range of -40°C to 150°C. Chassis mountable with screw terminals for secure installation.
PackageModule
MountingChassis Mount, Screw
PolarityNPN
Power1.8kW
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Technical Specifications
Infineon FF300R17KE4HOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.95V |
| Collector-emitter Voltage-Max | 2.3V |
| Continuous Collector Current | 440A |
| Halogen Free | Not Halogen Free |
| Height | 31.4mm |
| Input | Standard |
| Input Capacitance | 24.5nF |
| Lead Free | Lead Free |
| Max Collector Current | 440A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.8kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.8kW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 700ns |
| Turn-On Delay Time | 240ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF300R17KE4HOSA1 Datasheet
Download the complete datasheet for Infineon FF300R17KE4HOSA1 to view detailed technical specifications.
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