N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. Features a 1700V collector-emitter breakdown voltage and a continuous collector current of 440A. Offers a maximum power dissipation of 1.8kW and a low collector-emitter saturation voltage of 2.45V. Includes a 24.5nF input capacitance and operates within a temperature range of -40°C to 150°C. Chassis mountable with screw terminals for secure installation.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon FF300R17KE4HOSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.95V |
| Collector-emitter Voltage-Max | 2.3V |
| Continuous Collector Current | 440A |
| Halogen Free | Not Halogen Free |
| Height | 31.4mm |
| Input | Standard |
| Input Capacitance | 24.5nF |
| Lead Free | Lead Free |
| Max Collector Current | 440A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.8kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.8kW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 700ns |
| Turn-On Delay Time | 240ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon FF300R17KE4HOSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
