The FF450R12ME4BOSA1 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 675A and a maximum power dissipation of 2.25kW. It is packaged in a flange mount with a width of 62mm and a length of 152.1mm. The device is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon FF450R12ME4BOSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon FF450R12ME4BOSA1 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector-emitter Voltage-Max | 2.1V |
| Height | 20.8mm |
| Input | Standard |
| Input Capacitance | 28nF |
| Length | 152.1mm |
| Max Collector Current | 675A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.25kW |
| Mount | Chassis Mount, PCB, Screw |
| NTC Thermistor | Yes |
| Package Quantity | 10 |
| Packaging | Bulk |
| Power Dissipation | 2.25kW |
| RoHS Compliant | Yes |
| Width | 62mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon FF450R12ME4BOSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
