The FF450R17IE4 is a high-power insulated gate bipolar transistor from Infineon. It features a collector emitter breakdown voltage of 1.7kV and a maximum collector current of 620A. The device is designed for high-power applications and has a maximum power dissipation of 900W. It is packaged in a flange mount configuration and is suitable for operation over a temperature range of -40°C to 150°C. The FF450R17IE4 is compliant with RoHS regulations but does not meet the requirements for SVHC compliance.
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Infineon FF450R17IE4 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 620A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 900W |
| Mount | Screw |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon FF450R17IE4 to view detailed technical specifications.
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