The EconoDUAL 3 IGBT is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 600A. It features a high power dissipation of 2.5kW and a turn-on delay time of 210ns. The device is packaged in a flange mount module with a screw mount and is suitable for use in high-temperature applications, with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The EconoDUAL 3 IGBT is compliant with RoHS regulations and is available in a bulk packaging option.
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Infineon FF450R17ME4BOSA1 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector-emitter Voltage-Max | 2.3V |
| Continuous Collector Current | 600A |
| Halogen Free | Not Halogen Free |
| Height | 17.5mm |
| Input | Standard |
| Input Capacitance | 36nF |
| Lead Free | Contains Lead |
| Max Collector Current | 600A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.5kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Package Quantity | 10 |
| Packaging | Bulk |
| Power Dissipation | 2.5kW |
| RoHS Compliant | Yes |
| Series | EconoDUAL™ 3 |
| Turn-Off Delay Time | 800ns |
| Turn-On Delay Time | 210ns |
| RoHS | Compliant |
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