Infineon
FF600R12IE4BOSA1
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FF600R12IE4BOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
1.75V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.05V
Input
Standard
Input Capacitance
37nF
Max Collector Current
600A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.35kW
Mount
Chassis Mount, Screw
NTC Thermistor
Yes
Package Quantity
3
Packaging
Bulk
Reach SVHC Compliant
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FF600R12IE4BOSA1 Datasheet
Download the complete datasheet for Infineon FF600R12IE4BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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