FF600R12IP4

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

PackageModule

MountingScrew

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Infineon FF600R12IP4 technical specifications.

Package/Case

Module

Collector Emitter Breakdown Voltage

1.2kV

Collector Emitter Saturation Voltage

1.7V

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

600A

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Max Power Dissipation

3.35kW

Mount

Screw

Reach SVHC Compliant

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.