The FF600R17KF6C_B2 is an insulated gate bipolar transistor with a collector-emitter voltage maximum of 1.7kV and a maximum collector current of 975A. It has a maximum power dissipation of 4.8kW and operates within a temperature range of -40°C to 125°C. The device is mounted via screws and packaged in a module format.
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Infineon FF600R17KF6C_B2 technical specifications.
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 2.6V |
| Collector-emitter Voltage-Max | 1.7kV |
| Height | 38mm |
| Length | 140mm |
| Max Collector Current | 975A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 4.8kW |
| Mount | Screw |
| Package Quantity | 2 |
| Power Dissipation | 4.8kW |
| Radiation Hardening | No |
| Width | 130mm |
| RoHS | Compliant |
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