The FF650R17IE4D_B2 is an insulated gate bipolar transistor module with a collector-emitter breakdown voltage of 1.7kV and a saturation voltage of 2V. It can handle a maximum collector current of 930A and a maximum power dissipation of 4.15kW. The module is designed for screw mounting and has a package quantity of 3. The operating temperature range is from -40°C to 150°C.
PackageModule
MountingScrew
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Technical Specifications
Infineon FF650R17IE4D_B2 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 930A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 4.15kW |
| Mount | Screw |
| Package Quantity | 3 |
| Reach SVHC Compliant | Unknown |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF650R17IE4D_B2 Datasheet
Download the complete datasheet for Infineon FF650R17IE4D_B2 to view detailed technical specifications.
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