Infineon
FF650R17IE4VBOSA1
Insulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
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Technical Specifications
Infineon FF650R17IE4VBOSA1 technical specifications.
General
Number of Terminals
10
Min Operating Temperature
-40
Terminal Position
UPPER
Number of Elements
2
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Infineon FF650R17IE4VBOSA1 Datasheet
Download the complete datasheet for Infineon FF650R17IE4VBOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.