The FF75R12RT4HOSA1 is a high-power insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 75A. It operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 395W. The device is packaged in a flange mount configuration and is compliant with RoHS regulations.
PackageModule
MountingChassis Mount, Screw
Quick Jump:
Technical Specifications
Infineon FF75R12RT4HOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.15V |
| Collector-emitter Voltage-Max | 2.15V |
| Input | Standard |
| Input Capacitance | 4.3nF |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 395W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF75R12RT4HOSA1 Datasheet
Download the complete datasheet for Infineon FF75R12RT4HOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
