The FF800R17KE3 is a high-power insulated gate bipolar transistor (IGBT) module from Infineon. It features a maximum collector-emitter voltage of 1.7kV and a maximum collector current of 1.15kA. The module is designed for screw mounting and has a package quantity of 2. It operates within a temperature range of -40°C to 125°C. The FF800R17KE3 is not RoHS compliant.
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Infineon FF800R17KE3 technical specifications.
| Package/Case | Module |
| Collector-emitter Voltage-Max | 1.7kV |
| Height | 38mm |
| Length | 140mm |
| Max Collector Current | 1.15kA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 2 |
| RoHS Compliant | No |
| Width | 130mm |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon FF800R17KE3 to view detailed technical specifications.
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