The FF900R12IE4 is an insulated gate bipolar transistor with a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 900A. It is designed for high-power applications and has a maximum power dissipation of 5.1kW. The transistor is packaged in a flange mount configuration and is suitable for operating temperatures between -40°C and 150°C. It is compliant with RoHS regulations but not SVHC compliant.
PackageModule
MountingScrew
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Technical Specifications
Infineon FF900R12IE4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 38mm |
| Length | 172mm |
| Max Collector Current | 900A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 5.1kW |
| Mount | Screw |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 89mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF900R12IE4 Datasheet
Download the complete datasheet for Infineon FF900R12IE4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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