The FP10R12W1T4_B3 is an insulated gate bipolar transistor module from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 20A. It features a maximum power dissipation of 105W and operates within a temperature range of -40°C to 150°C. The module is mounted using screws and is available in a 24-pack quantity. It is compliant with RoHS regulations.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.85V |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 105W |
| Mount | Screw |
| Package Quantity | 24 |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon FP10R12W1T4_B3 to view detailed technical specifications.
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