Infineon
FP10R12W1T4_B3
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
PackageModule
MountingScrew
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Technical Specifications
Infineon FP10R12W1T4_B3 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
105W
Mount
Screw
Package Quantity
24
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FP10R12W1T4_B3 Datasheet
Download the complete datasheet for Infineon FP10R12W1T4_B3 to view detailed technical specifications.
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