The FP10R12YT3 is an insulated gate bipolar transistor from Infineon with a maximum collector-emitter voltage of 1.2kV and a maximum collector current of 16A. It has a power dissipation of 69.5W and is packaged in a FLANGE MOUNT, R-XUFM-X23 package. The transistor operates within a temperature range of -40°C to 125°C and is RoHS compliant. The FP10R12YT3 features a turn-on delay time of 45ns and a turn-off delay time of 290ns.
Infineon FP10R12YT3 technical specifications.
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector-emitter Voltage-Max | 1.2kV |
| Continuous Collector Current | 16A |
| Height | 12mm |
| Length | 62.8mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 20 |
| Power Dissipation | 69.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 290ns |
| Turn-On Delay Time | 45ns |
| Width | 33.8mm |
| RoHS | Compliant |
No datasheet is available for this part.
