The FP25R12KT4BOSA1 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 25A and a maximum power dissipation of 160W. It is packaged in a module with a chassis mount and screw configuration. The device is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The IGBT features a turn-on delay time of 160ns and a turn-off delay time of 330ns.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FP25R12KT4BOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Continuous Collector Current | 25A |
| Halogen Free | Not Halogen Free |
| Height | 17.5mm |
| Input | Standard |
| Input Capacitance | 1.45nF |
| Lead Free | Contains Lead |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 160W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 330ns |
| Turn-On Delay Time | 160ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP25R12KT4BOSA1 Datasheet
Download the complete datasheet for Infineon FP25R12KT4BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.