Infineon
FP25R12KT4BOSA1
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-23
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FP25R12KT4BOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
2.15V
Continuous Collector Current
25A
Halogen Free
Not Halogen Free
Height
17.5mm
Input
Standard
Input Capacitance
1.45nF
Lead Free
Contains Lead
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
160W
Mount
Chassis Mount, Screw
NTC Thermistor
Yes
Packaging
Bulk
RoHS Compliant
Yes
Turn-Off Delay Time
330ns
Turn-On Delay Time
160ns
Compliance
RoHS
Compliant
Datasheet
Infineon FP25R12KT4BOSA1 Datasheet
Download the complete datasheet for Infineon FP25R12KT4BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.