Infineon
FP25R12U1T4
Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
PackageModule
MountingScrew
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Technical Specifications
Infineon FP25R12U1T4 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
1.85V
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
39A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
190W
Mount
Screw
Reach SVHC Compliant
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FP25R12U1T4 Datasheet
Download the complete datasheet for Infineon FP25R12U1T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.