The FP25R12W2T4 is a high-power IGBT module from Infineon, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 39A. It has a maximum power dissipation of 175W and operates within a temperature range of -40°C to 150°C. The module is packaged in an EASY2B type and is lead-free and RoHS compliant.
Sign in to ask questions about the Infineon FP25R12W2T4 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon FP25R12W2T4 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Lead Free | Lead Free |
| Max Collector Current | 39A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 175W |
| Mount | Screw |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon FP25R12W2T4 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
