The FP30R06KE3 is a 600V insulated gate bipolar transistor (IGBT) module from Infineon, designed for high-power applications. It features a maximum collector current of 37A and operates within a temperature range of -40°C to 150°C. The module is packaged in a flange mount configuration, measuring 17mm in height, 45mm in width, and 107.5mm in length. It is available in a bulk packaging option with 10 units per package and is compliant with RoHS regulations.
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Technical Specifications
Infineon FP30R06KE3 technical specifications.
General
| Package/Case | Module |
| Collector-emitter Voltage-Max | 600V |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 37A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 10 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Width | 45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP30R06KE3 Datasheet
Download the complete datasheet for Infineon FP30R06KE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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