The FP35R12KT4 is an insulated gate bipolar transistor from Infineon, featuring a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 35A. It is designed for operation in temperatures ranging from -40°C to 150°C and has a maximum power dissipation of 210W. The device is mounted via screw and is compliant with RoHS regulations, but not SVHC compliant.
PackageModule
MountingScrew
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Technical Specifications
Infineon FP35R12KT4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 210W |
| Mount | Screw |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP35R12KT4 Datasheet
Download the complete datasheet for Infineon FP35R12KT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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