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INFINEON
FP35R12KT4P
Datasheet
Infineon
FP35R12KT4P
Active
Insulated Gate Bipolar Transistor
Semiconductors
Discrete Semiconductors
Semiconductors
Discrete Semiconductors
Transistors
Insulated Gate Bipolar Transistors (IGBT)
Insulated Gate Bipolar Transistor
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Specs
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Technical Specifications
General
Max Operating Temperature
150
Number of Terminals
23
Min Operating Temperature
-40
Terminal Position
UPPER
Number of Elements
7
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
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