The FP35R12U1T4 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a saturation voltage of 1.85V. It is available in a module package and is RoHS compliant. The transistor operates within a temperature range of -40°C to 150°C and can dissipate up to 250W of power. It is suitable for high-power applications requiring high voltage and current handling.
PackageModule
Power250W
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Technical Specifications
Infineon FP35R12U1T4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Voltage (VCEO) | 1.85V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Package Quantity | 30 |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP35R12U1T4 Datasheet
Download the complete datasheet for Infineon FP35R12U1T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.