The FP50R12KT4GB15BOSA1 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The transistor is packaged in a flange mount with a package type of R-XUFM-X35 and is RoHS compliant. It has an input capacitance of 2.8nF and a maximum power dissipation of 280W.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Input | Standard |
| Input Capacitance | 2.8nF |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 280W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon FP50R12KT4GB15BOSA1 to view detailed technical specifications.
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