The FP50R12KT4GBOSA1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It has a maximum power dissipation of 280W and operates within a temperature range of -40°C to 150°C. The transistor is packaged in a flange mount configuration and is RoHS compliant. It features an NTC thermistor and has a standard input with an input capacitance of 2.8nF.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Input | Standard |
| Input Capacitance | 2.8nF |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 280W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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