Infineon
FP50R12KT4GBOSA1
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-35
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FP50R12KT4GBOSA1 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
2.15V
Input
Standard
Input Capacitance
2.8nF
Max Collector Current
50A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
280W
Mount
Chassis Mount, Screw
NTC Thermistor
Yes
Packaging
Bulk
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon FP50R12KT4GBOSA1 Datasheet
Download the complete datasheet for Infineon FP50R12KT4GBOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.