The FP75R07N2E4 is an insulated gate bipolar transistor with a collector-emitter saturation voltage of 1.95V and a maximum collector current of 75A. It operates within a temperature range of -40°C to 150°C and has a maximum operating voltage of 650V. The device is packaged in a flange mount configuration and is RoHS compliant. It can dissipate a maximum power of 250W.
PackageModule
MountingScrew
Power250W
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Technical Specifications
Infineon FP75R07N2E4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector-emitter Voltage-Max | 650V |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 10 |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FP75R07N2E4 Datasheet
Download the complete datasheet for Infineon FP75R07N2E4 to view detailed technical specifications.
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