N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V collector-emitter voltage (V(BR)CES) and a 105A continuous collector current (I(C)). This 35-terminal module offers 7 integrated elements and operates up to a maximum temperature of 150°C, with all terminals positioned at the upper end.
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Technical Specifications
Infineon FP75R12KE3BOSA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 35 |
| Terminal Position | UPPER |
| Pin Count | 35 |
| Number of Elements | 7 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon FP75R12KE3BOSA1 Datasheet
Download the complete datasheet for Infineon FP75R12KE3BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.