N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V collector-emitter voltage (V(BR)CES) and a 105A continuous collector current (I(C)). This 35-terminal module offers 7 integrated elements and operates up to a maximum temperature of 150°C, with all terminals positioned at the upper end.
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Technical Specifications
Infineon FP75R12KE3BOSA1 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
35
Terminal Position
UPPER
Pin Count
35
Number of Elements
7
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
No
REACH
Compliant
Military Spec
False
Datasheet
Infineon FP75R12KE3BOSA1 Datasheet
Download the complete datasheet for Infineon FP75R12KE3BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.