The FS200R12KT4RB11BOSA1 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 280A. It operates within a temperature range of -40°C to 150°C and is packaged in a module format for chassis mount applications. The device is not halogen free and contains lead, but is compliant with RoHS regulations.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Halogen Free | Not Halogen Free |
| Input | Standard |
| Input Capacitance | 14nF |
| Lead Free | Contains Lead |
| Max Collector Current | 280A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1kW |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Package Quantity | 10 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon FS200R12KT4RB11BOSA1 to view detailed technical specifications.
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