The FS25R12W1T4 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 45A. It features a flange mount package type and is designed to operate within a temperature range of -40°C to 150°C. The device is lead-free and RoHS compliant, making it suitable for a wide range of applications.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Lead Free | Lead Free |
| Max Collector Current | 45A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 205W |
| Mount | Screw |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
