The FS50R12KT4B11BOSA1 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 280W. The device is packaged in a flange mount with a screw mount and is available in a tray packaging with 10 units per package. The FS50R12KT4B11BOSA1 is RoHS compliant and features an NTC thermistor for thermal monitoring.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Infineon FS50R12KT4B11BOSA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.15V |
| Input | Standard |
| Input Capacitance | 2.8nF |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 280W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Package Quantity | 10 |
| Packaging | Tray |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FS50R12KT4B11BOSA1 Datasheet
Download the complete datasheet for Infineon FS50R12KT4B11BOSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.