The FS75R07W2E3B11ABOMA1 is a 650V insulated gate bipolar transistor (IGBT) module from Infineon, designed for high-power applications. It features a maximum collector current of 95A and a maximum power dissipation of 275W. The module operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. The IGBT module is packaged in a flange mount with a height of 12.35mm and is available in a tray packaging with 15 units per package.
PackageModule
MountingScrew
Power275W
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Technical Specifications
Infineon FS75R07W2E3B11ABOMA1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Voltage (VCEO) | 650V |
| Continuous Collector Current | 75A |
| Halogen Free | Not Halogen Free |
| Height | 12.35mm |
| Lead Free | Contains Lead |
| Max Collector Current | 95A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 275W |
| Max Repetitive Reverse Voltage (Vrrm) | 650V |
| Mount | Screw |
| Package Quantity | 15 |
| Packaging | Tray |
| Power Dissipation | 275W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 180ns |
| Turn-On Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FS75R07W2E3B11ABOMA1 Datasheet
Download the complete datasheet for Infineon FS75R07W2E3B11ABOMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.