The FS75R12KE3_B3 is a high-power insulated gate bipolar transistor (IGBT) with a maximum collector-emitter voltage of 1.2kV and a maximum collector current of 100A. It is packaged in a module format with a package quantity of 10. The device is designed to operate within a temperature range of -40°C to 125°C. It is not radiation hardened and is not RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon FS75R12KE3_B3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | Module |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 100A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 10 |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon FS75R12KE3_B3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
