Insulated Gate Bipolar Transistor, 1600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Package Quantity | 2 |
| Power Dissipation | 10kW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
